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Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors
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10.1063/1.4772485
/content/aip/journal/apl/101/25/10.1063/1.4772485
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4772485
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The ID-VG transfer characteristics of the a-IGZO TFT before and after NBTS under different temperatures in (a) the dark and (b) the illumination. (c) The NBTIS time dependence of delta interface trap state density for a-IGZO TFT.

Image of FIG. 2.
FIG. 2.

The ID-VG transfer characteristics of the a-IGZO TFT before and after NBTIS with different gate biases at (a) 303 K and (b) 363 K.

Image of FIG. 3.
FIG. 3.

Recovery behaviors of the ID-VG transfer curves after the NBTIS at 363 K.

Image of FIG. 4.
FIG. 4.

Recovery behaviors of (a) the CGD-VG and (b) the CGS-VG transfer curves of the a-IGZO TFT after the NBTIS at 363 K.

Image of FIG. 5.
FIG. 5.

The schematic diagram of degradation mechanism after the NBTIS at high temperature.

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/content/aip/journal/apl/101/25/10.1063/1.4772485
2012-12-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4772485
10.1063/1.4772485
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