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(a) Photograph of graphene transferred onto the Si/SiO2 substrate. (b) Optical micrograph of etched graphene pattern for GFET fabrication. (c) AFM image of a GFET at the edge of the patterned graphene. Inset is the height profile along the white line marked in the AFM image. (d) The finished GFET device with metal source and drain electrodes. (e) The schematic diagram of the GFET device structure.
(a) I ds-V gs curve of an as-prepared GFET device (W = 5 μm and L = 10 μm) with Ni source and drain contacts (V ds = 10 mV); (b) I ds-V ds curves with V gs varying from −100 V to 150 V (step of 50 V).
(a) I ds-V gs curve of a GFET after deposition of 3 nm-thick Al film (V ds = 0.1 V); (b) I ds-V ds curves with V gs varying from −100 V to 100 V (step of 50 V).
Comparison of I ds-V gs curves for the GFET device immediately after deposition of 3 nm-thick Al film and 10 days later.
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