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Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes
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10.1063/1.4772506
/content/aip/journal/apl/101/25/10.1063/1.4772506
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4772506
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Output power and forward voltage measured at 5 mA CW operation at various temperatures.

Image of FIG. 2.
FIG. 2.

Apparent charge profiles of a 273 nm LED calculated from capacitance-voltage measurements taken at various temperatures.

Image of FIG. 3.
FIG. 3.

The position of the second quantum well from the p-side in the depletion region and the carrier concentration measured in that well as a function of device temperature.

Image of FIG. 4.
FIG. 4.

Integrated photoluminescence intensity of an LED device as a function of temperature.

Image of FIG. 5.
FIG. 5.

Relative injection efficiency plotted as a function of temperature. The efficiency is normalized to 1 at room temperature.

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/content/aip/journal/apl/101/25/10.1063/1.4772506
2012-12-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4772506
10.1063/1.4772506
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