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Output power and forward voltage measured at 5 mA CW operation at various temperatures.
Apparent charge profiles of a 273 nm LED calculated from capacitance-voltage measurements taken at various temperatures.
The position of the second quantum well from the p-side in the depletion region and the carrier concentration measured in that well as a function of device temperature.
Integrated photoluminescence intensity of an LED device as a function of temperature.
Relative injection efficiency plotted as a function of temperature. The efficiency is normalized to 1 at room temperature.
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