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Multi-finger EGFET fabricated on plastic substrates. (a) 3-D image of the complete device of a 10-finger unit cell. (b) Optical image of the sample. The device area is highlighted by a white rectangle. Inset shows an array of the unit cells with gate (G), source (S), and drain (D) pads. (c) AFM image of the active channel area revealing a device with 10-fingers.
Experimental electrical characteristics of MEGFETs. (a) Gate modulation of the total resistance including contact resistance from a device. (b), (c), and (d) Histograms of the Dirac voltages, residual carrier concentrations, and peak carrier mobilities from all measured devices, respectively.
The dependence on device properties on mechanical bending of the substrate. (a) Mechanical fixture for bending measurements. The flexible substrate is highlighted by a red circle. Inset shows the flexible substrate under bending. (b) The dependence of the Dirac voltage on the bending radius. (c) and (d) Effects of bending on carrier mobilities. (e) and (f) Effects of bending on the contact resistances.
Mechanical bending experiments for metal interconnects and MIM capacitors on PI films. (a) The change in conductance of metal lines. (b) The change in normalized capacitances of MIM capacitors. CAP1, CAP2, CAP3, and CAP4 are 10 × 10 μm2, 50 × 50 μm2, 100 × 100 μm2, and 200x200 μm2, respectively. The dashed line is a visual guide indicating invariant properties over a wide bending radius.
Experiments involving harsh conditions. (a) Photographs of the different liquids used during the test. (b) Still image of the devices been walked over to emulate a slow-moving load. (c) Still image of 2002 Honda CRV sport-utility vehicle going over the devices. The real time video for (b) and (c) is available online. (d) The normalized change in current and mobility after the different harsh conditions. (e) Doubler characteristics. The output power at the doubled frequency (2f) and the conversion gain as a function of the input power at the fundamental frequency (1f = 2 MHz) are given. The gate is biased at the Dirac point and VD = 300 mV (enhanced online). [URL: http://dx.doi.org/10.1063/1.4772541.1]10.1063/1.4772541.1
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