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Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
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10.1063/1.4772548
/content/aip/journal/apl/101/25/10.1063/1.4772548
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4772548
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Reverse-bias current-voltage curves of LED1, LED2, and LED3.

Image of FIG. 2.
FIG. 2.

Top-view SEM images of the surface morphology for (a) MQW1 and (b)MQW3. (c) A cross-sectional SEM image of a single V-pit in MQW3, and (d) a cross-sectional TEM image of LED3.

Image of FIG. 3.
FIG. 3.

Electroluminescence intensity of LED1, LED2, and LED3 with three, four, and five periods of quantum wells under pulsed injection.

Image of FIG. 4.
FIG. 4.

(a) Topographic image of MQW1. (b) Simultaneously measured C-AFM current image of the same region at 1.5 V. (c) Topographic image of MQW3. (d) Simultaneously-measured C-AFM current image of the same region at 1.5 V. The images have the same scan area of 1 × 1 μm2.

Image of FIG. 5.
FIG. 5.

I-V characteristics of MQW1 measured in a nano-scale region at V-defect and at defect-free region, respectively.

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/content/aip/journal/apl/101/25/10.1063/1.4772548
2012-12-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4772548
10.1063/1.4772548
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