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Reverse-bias current-voltage curves of LED1, LED2, and LED3.
Top-view SEM images of the surface morphology for (a) MQW1 and (b)MQW3. (c) A cross-sectional SEM image of a single V-pit in MQW3, and (d) a cross-sectional TEM image of LED3.
Electroluminescence intensity of LED1, LED2, and LED3 with three, four, and five periods of quantum wells under pulsed injection.
(a) Topographic image of MQW1. (b) Simultaneously measured C-AFM current image of the same region at 1.5 V. (c) Topographic image of MQW3. (d) Simultaneously-measured C-AFM current image of the same region at 1.5 V. The images have the same scan area of 1 × 1 μm2.
I-V characteristics of MQW1 measured in a nano-scale region at V-defect and at defect-free region, respectively.
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