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Structural and electronic properties of GaAs0.64P0.19Sb0.17 on GaAs
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10.1063/1.4772550
/content/aip/journal/apl/101/25/10.1063/1.4772550
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4772550

Figures

Image of FIG. 1.
FIG. 1.

(a) Lattice point (004) on reciprocal space. The GaAs0.64P0.19Sb0.17 epi layer is 0.2° tilts to (110). 1(b) the RSM of (115) plane. The vertical lattice constant az of the epilayer is 5.7113 Å, and the horizontal lattice constant axy of the epilayer is 5.6720 Å.

Image of FIG. 2.
FIG. 2.

(a) The PzR results of the transitions from conduction band to heavy hole (e-hh) and to light hole (e-lh). The signal in the range of 1.7 eV to 1.9 eV is the absorption from SO band edge to conduction band edge (e-so). The inset in (a) is the comparison of the PzR and PR results. (b) is the energy of e-hh, e-lh and e-so extracted from PzR. The Varshni equation: is used for curve fitting for e-hh and e-lh and e-so transitions. The table lists the parameters, E(0), α, and β, of each curve.

Image of FIG. 3.
FIG. 3.

The temperature dependency of the crystal field, spin-orbital splitting energies and unstrained GaAs0.64P0.19Sb0.17 band gap energy. The curve and equation are Varshni fitting for the unstrained GaAs0.64P0.19Sb0.17.

Tables

Generic image for table
Table I.

Parameters used for Eg calculation of the GaAs0.64P0.19Sb0.17

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/content/aip/journal/apl/101/25/10.1063/1.4772550
2012-12-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electronic properties of GaAs0.64P0.19Sb0.17 on GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4772550
10.1063/1.4772550
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