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Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure
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10.1063/1.4772986
/content/aip/journal/apl/101/25/10.1063/1.4772986
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4772986

Figures

Image of FIG. 1.
FIG. 1.

C-V curves of MOS capacitors measured at different frequencies with structures of (a) sample A: HfO2 (3.7 nm)/SiO2 (7.5 nm)/SiC, (b) sample B: HfO2 (3.2 nm)/SiO2 (15.5 nm)/SiC, (c) sample C: HfO2/SiC, and (d) sample D: Al/HfO2/ SiO2/Si. The insetted figures illustrate the various stacked structures.

Image of FIG. 2.
FIG. 2.

HRTEM images taken on (a) sample A and (b) sample B.

Image of FIG. 3.
FIG. 3.

Auger electron spectra of carbon section measured on (a) sample A and (b) sample B. The inset figure illustrated the measured regions along the depth in stacked structures.

Image of FIG. 4.
FIG. 4.

XPS depth profiles of the (a) Si 2p, (b) C 1s core levels of sample B, (c) composition ratio of elements in sample B as calculated by integral XPS intensity.

Tables

Generic image for table
Table I.

Process parameters and conditions of samples A, B, C, and D.

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/content/aip/journal/apl/101/25/10.1063/1.4772986
2012-12-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4772986
10.1063/1.4772986
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