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C-V curves of MOS capacitors measured at different frequencies with structures of (a) sample A: HfO2 (3.7 nm)/SiO2 (7.5 nm)/SiC, (b) sample B: HfO2 (3.2 nm)/SiO2 (15.5 nm)/SiC, (c) sample C: HfO2/SiC, and (d) sample D: Al/HfO2/ SiO2/Si. The insetted figures illustrate the various stacked structures.
HRTEM images taken on (a) sample A and (b) sample B.
Auger electron spectra of carbon section measured on (a) sample A and (b) sample B. The inset figure illustrated the measured regions along the depth in stacked structures.
XPS depth profiles of the (a) Si 2p, (b) C 1s core levels of sample B, (c) composition ratio of elements in sample B as calculated by integral XPS intensity.
Process parameters and conditions of samples A, B, C, and D.
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