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2.8 μm emission from type-I quantum wells grown on InAsxP1−x/InP metamorphic graded buffers
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10.1063/1.4773024
/content/aip/journal/apl/101/25/10.1063/1.4773024
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4773024
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Figures

Image of FIG. 1.
FIG. 1.

(a) 5 × 5 μm2 AFM image and (b) bright-field PV-TEM image of the InAs0.72P0.28 cap grown on an InAsxP1−x metamorphic step-graded buffer.

Image of FIG. 2.
FIG. 2.

(a) InAs0.94P0.06 MQW sample structure, (b) ω-2Θ (004) HRXRD scan (black) and RADS simulation results (red), and (c) cross-sectional TEM image of five periods of MQW region and graded InAs0.78P0.22 cap.

Image of FIG. 3.
FIG. 3.

PL spectra from the MQW sample showing 2.54 μm and 2.83 μm peak emission at 78 K and 300 K, respectively.

Image of FIG. 4.
FIG. 4.

(a) Calculated QW energy band alignment and (b) T-dependent PL results showing experimental ground-state peak energies (black squares), Varshni fit (black line), and calculated peak energies (red crosses).

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/content/aip/journal/apl/101/25/10.1063/1.4773024
2012-12-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 2.8 μm emission from type-I quantum wells grown on InAsxP1−x/InP metamorphic graded buffers
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4773024
10.1063/1.4773024
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