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Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
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10.1063/1.4773244
/content/aip/journal/apl/101/25/10.1063/1.4773244
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4773244
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

J-V characteristics of the (Ni/Au)/InAlN/AlN/GaN diode measured at various temperatures. C-V plot (at 1 MHz) at RT is also shown. The band diagrams (1-D Poisson simulation) show Fowler-Nordheim tunneling at higher biases and trap assisted emission at lower biases dominate. The schematic of the diode structure and the zoomed-in view of the J-V characteristics to capture the temperature dependence prominently are shown in the inset.

Image of FIG. 2.
FIG. 2.

(a) Calculated electric field at the InAlN barrier for different reverse bias voltages; the charge diagram and electric field as a function of 2DEG density is shown in the inset; (b) the evaluated vs plot for various temperatures has been shown.

Image of FIG. 3.
FIG. 3.

(a) Extracted A(T) vs (1000/T) for various temperatures has been plotted. The data points have been fitted with a straight line of “y = mx;” (b) Extracted B(T) vs (1000/T) for various temperatures have been plotted. Conductive AFM image of the InAlN surface has been shown in the inset.

Image of FIG. 4.
FIG. 4.

(a) The evaluated vs plot for various temperatures has been shown. Fluctuations of surface barrier height due to In segregation have been shown in the inset; (b) experimental and calculated current densities (FN dominated), which take into account the variation of are plotted.

Image of FIG. 5.
FIG. 5.

Experimental and calculated current densities using proposed MFPE and FN tunneling expression. At low field, MFPE matches the experimental data, whereas at high field the tunneling transport is FN dominated.

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/content/aip/journal/apl/101/25/10.1063/1.4773244
2012-12-21
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/25/10.1063/1.4773244
10.1063/1.4773244
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