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Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches
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10.1063/1.4773183
/content/aip/journal/apl/101/26/10.1063/1.4773183
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773183
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Figures

Image of FIG. 1.
FIG. 1.

Raman spectrum method. (a) Schematic view of a graphene capacitive shunt switch. (b) SEM image of a graphene beam collapsed on a SiO2/Si substrate. (c) Raman G peak image of the graphene beam shown in (b). (d) Raman spectra of a graphene beam at “up-state” position and “down-state” position, respectively. (e) Theoretical prediction of pull-in voltages (lines) and pull-in voltages measured by RSM (dots). l is the length of the graphene beam.

Image of FIG. 2.
FIG. 2.

Relation between the Raman spectrum intensity and out-of plane motion. (a) Schematic view of experimental set up. The graphene beam is kept still and the Raman microscope moves vertically. (b) The G peak intensity decreases when the microscope moves far away from the graphene beam. 0 nm indicates the best focused height. (c) The 2D band intensity decreases when the microscope moves far away from the graphene beam. (d) Relation between the normalized G peak intensity and microscope motion.

Image of FIG. 3.
FIG. 3.

Relation between the Raman spectrum intensity and SiO2/Si substrate. (a) Schematic view of experimental setup. Graphene is on top of SiO2/Si trenches. (b) and (c) Optical and SEM image of graphene flake over trenches, respectively. (d)–(f) Raman mapping images of a graphene flake on top of SiO2 6 nm thick. (d)–(f) are images of Si-Si peak, G peak, and 2D band, respectively. (g)–(i) Si-Si peak, G peak, and 2D band Raman images of graphene on top of SiO2 20 nm thick. (j)–(l) Si-Si peak, G peak, and 2D band Raman images of graphene on top of SiO2 100 nm thick.

Image of FIG. 4.
FIG. 4.

Detection of pull-in voltages from Raman spectrum shifts. (a) SEM image of a graphene beam at “down-state” position. The red spot demonstrates the position of Raman laser spot. (b) Si-Si peak at “up-state” position and “down-state” position. (c) G peak at “up-state” position and “down-state” position. (d) 2D band at “up-state” position and “down-state” position. (e) G peak frequency shift during switching.

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/content/aip/journal/apl/101/26/10.1063/1.4773183
2012-12-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773183
10.1063/1.4773183
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