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Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition
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10.1063/1.4773184
/content/aip/journal/apl/101/26/10.1063/1.4773184
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773184
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Figures

Image of FIG. 1.
FIG. 1.

SEM images of the CdS samples showing how the cluster size increases by increasing the CdS film thickness where (a) ALD HfO2 layer, (b) t = 25 nm CdS, (c) t = 40 nm CdS, (d) t = 70 nm CdS, (e) t = 100 nm CdS, and (f) t = 130 nm CdS. t refers to CdS film thickness.

Image of FIG. 2.
FIG. 2.

(a) ID-VG transfer characteristics showing VT shift between the 1st and 6th sweep for 100 nm CdS TFTs measured in the saturation regime (VDS = 20 V). Inset shows a schematic cross section of the transistor used in this analysis. (b) Dependence of mobility (μsat), cluster (▪), and grain size (◻) with CdS film thickness. Grain size is independent of CdS film thickness, as determined by XRD. Inset shows threshold voltage (ΔVT) shift reduction as function of CdS film thickness (nm).

Image of FIG. 3.
FIG. 3.

(a) XRD spectra for different thickness of the CdS films show an increased intensity for thicker films. (b) FTIR absorption spectra of CdS film of different thicknesses showing three region: 3600–3000 cm−1 attributed to OH stretching at the dielectric/CdS interface, 2200 cm−1 attributed to the C-N stretching vibrations of cyanamide in the bulk of the CdS film, and 2400 cm−1 attributed to S-H in the bulk of the CdS films.

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/content/aip/journal/apl/101/26/10.1063/1.4773184
2012-12-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773184
10.1063/1.4773184
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