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Effects of Be doping on InP nanowire growth mechanisms
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10.1063/1.4773206
/content/aip/journal/apl/101/26/10.1063/1.4773206
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773206

Figures

Image of FIG. 1.
FIG. 1.

Tilted view (45°) SEM images of (a) sample A1, undoped, (b) sample A2, Be doping = 1018 cm−3, and (c) sample A3, Be doping = 2 × 1019 cm−3. Scale bars indicate 1 μm.

Image of FIG. 2.
FIG. 2.

TEM image of typical nanowire from sample A3. Inset shows SAD pattern indicating the wurtzite crystal structure.

Image of FIG. 3.
FIG. 3.

Length versus diameter for different Be doped InP nanowires (sample A1: undoped, sample A2: 1018 cm−3, and sample A3: 2 × 1019 cm−3). Experimental data (symbols) are fitted by Eq. (4) at 250 nm (lines) with the parameters summarized in Table II.

Image of FIG. 4.
FIG. 4.

HAADF image of InAs-InP nanowire from sample B1.

Image of FIG. 5.
FIG. 5.

Length versus diameter for different Be doped InP nanowire segments grown on InAs bases (sample B1: undoped, sample B2: 4 × 1019 cm−3). Experimental data (symbols) are fitted by Eq. (4) at 108 nm (lines) with the parameters summarized in Table II.

Tables

Generic image for table
Table I.

Description of samples.

Generic image for table
Table II.

Fitting parameters.

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/content/aip/journal/apl/101/26/10.1063/1.4773206
2012-12-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of Be doping on InP nanowire growth mechanisms
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773206
10.1063/1.4773206
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