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High sensitivity and fast response and recovery times in a ZnO nanorod array/p-Si self-powered ultraviolet detector
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10.1063/1.4773245
/content/aip/journal/apl/101/26/10.1063/1.4773245
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773245
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction pattern of ZnO nanorod arrays grown on Si(111) by microwave–assisted CBD.

Image of FIG. 2.
FIG. 2.

FESEM image of ZnO nanorod arrays grown on Si(111) by microwave–assisted CBD.

Image of FIG. 3.
FIG. 3.

Room temperature photoluminescence spectrum of ZnO nanorod arrays grown on Si(111) by microwave–assisted CBD.

Image of FIG. 4.
FIG. 4.

The I-V characteristic of ZnO nanorod arrays/p-Si(111) p-n hetrojunction. The inset shows the schematic illustration of UV photovoltage detector.

Image of FIG. 5.
FIG. 5.

The sensitivity of the UV detector upon exposure to 395 nm light at zero bias voltage, (a) and (b) the repeatability property (ON/OFF) of UV detector for 16 s.

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/content/aip/journal/apl/101/26/10.1063/1.4773245
2012-12-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High sensitivity and fast response and recovery times in a ZnO nanorod array/p-Si self-powered ultraviolet detector
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773245
10.1063/1.4773245
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