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(a) Intersubband transmission measurement (black) and fit (red) of the sample consisting of 50 layers of InAs/AlInAs QDashes (T = 300 K). Inset: SEM image of the uncapped QDashes. (b) Top: Scheme of the normal incidence absorption measurement. Bottom: Electron wave functions computed with the 3D Schroedinger solver for the |1,1,1〉 and the |2,1,1〉 energy levels (left) and for the |1,2,1〉 and the |2,2,1〉 energy levels (right).
(a) Design of the quantum cascade structure at an electric field of F = 76 kV/cm. (b) Z-contrast STEM image of 3 out of the 50 active regions grown. The thick red line indicates the part of the QW, which is much thicker compared to the design.
(a) TE EL from sample D, with the ridge in the same direction as the length of the QDashes, [1–10]-direction (thick line) and from the sample B, with the ridge perpendicular to the [1–10] direction. (b) Same as above for the TM EL.
(a) EL measurements at various biases for the sample exhibiting TE-polarized emission. Inset: LIV characteristics at 80 K for this sample. (b)Temperature dependence of the TE-polarized EL for a constant pump power of 4.8 A with a 3% duty cycle. Inset: Area fitted under the TE-polarized EL curve vs. temperature.
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