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Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
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10.1063/1.4773367
/content/aip/journal/apl/101/26/10.1063/1.4773367
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773367
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the n-ZnMgO/p-GaN heterojunction LED device. SEM images of ZnMgO thin films with the Mg contents of (b) 0%, (c) 4%, and (d) 15%.

Image of FIG. 2.
FIG. 2.

The EL spectra of the (a) n-ZnO/p-GaN and (b) n-Zn0.5Mg0.5O/p-GaN (Zn0.85Mg0.15 in source material) LED devices under various bias voltages. The corresponding PL spectra of the (c) ZnO and (d) Zn0.5Mg0.5O films.

Image of FIG. 3.
FIG. 3.

(a) The current-voltage (I-V) characteristics of Zn0.5Mg0.5O before and after the ITO deposition and annealing at 400 °C. The inset shows the leakage current at reverse bias voltage conditions. (b) The electroluminescence and (c) photoluminescence spectra of the annealed Zn0.5Mg0.5O LED device under various bias voltages. Inset in (b) is a photo taken from the device under a bias voltage of 15 V. (d) The electroluminescence spectra of the ITO/n-Zn0.5Mg0.5O/p-GaN heterojunction-based LED device further annealed at 500 °C. The emission peak in (d) has shifted back to the near-UV region.

Image of FIG. 4.
FIG. 4.

The energy band diagram of the n-Zn0.5Mg0.5O/p-GaN heterojunction at forward bias conditions. At equilibrium, electrons are captured by the indium-induced deep defect levels (∼2.2 eV above the valence band of ZnMgO) and then recombine with the holes injected from the valence band of GaN to emit light.

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/content/aip/journal/apl/101/26/10.1063/1.4773367
2012-12-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773367
10.1063/1.4773367
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