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(a) Raman spectra of a SWNT film sample at an excitation wavelength of 532 nm. Inset: magnified spectrum of a radial breathing mode (RBM) peak. (b) Experimental measurement data and the fitted curves of electrical conductivity hysteresis on the SWNT film sample when cooling the temperature down from 300 K to 20 K.
(a) Optical absorption spectra of SWNTs in the near-infrared regime. Inset: a background π-plasmon absorption eliminated spectrum. S11 indicates the lowest transition energy gap (inset is the same as the scale of (a)). (b) Normalized transmission change (ΔT/T) of SWNT film in time-resolved pump-probe spectra.
(a) The fabricated SWNT photoconductive switch combined with high resistivity Si lens. Inset: scanning electron microscope (SEM) images of plain view (upper left) and cross-section view (upper right). The dashed line box in the inset (below down) indicates the photoconductive gap (10 × 10 μm2) in the center of the log-spiral antenna. (b) The THz-TDS system setup (DCF: dispersion compensating fiber and SMF: single mode fiber).
(a) DC voltage bias dependence of generated photocurrent temporal waveforms (y-axis, linear scale). (b) FFT spectra of Fig. 3(a) (y-axis, log scale). (c)Bias field dependence of photocurrent amplitude peak values (y-axis, linear scale).
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