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Current density vs applied voltage of a Schottky diode with a transrotational NiSi layer contact compared with a conventional reference diode (poly-NiSi).
Surface morphology (a) and map of the current (b) through the transrotational nickel silicide/Si barrier, simultaneously measured by torsion resonant conductive atomic force microscopy (1 μm × 1 μm scan area). Representative linescans of the height (c) and of the current profiles (d). (e) Spatial distribution of the highly conductive (i.e., low barrier height) regions in the current map.
(a) Plan-view TEM analyses of the as-reacted NiSi layer. A transrotational NiSi domain is characterised by three different bending contours crossing one to another at the core region which has a diameter of about 20 nm. The 3-dimensional schematic view (right panel) of a trans-NiSi domain shows the silicide planes aligned to the (220) planes of silicon through the interface, along each bending contour (b0 and b1) and also the planes bending outside them; (b) schematic view of the silicide planes bending along a section perpendicular to a bending contour; (c) cross section TEM analyses of a single large NiSi trans-domain.
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