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Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures
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10.1063/1.4773511
/content/aip/journal/apl/101/26/10.1063/1.4773511
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773511

Figures

Image of FIG. 1.
FIG. 1.

Cross sectional (a) and top view (b) of the fabricated sample. The dotted and meshed regions show mesa etched and gate metal regions, respectively. The sample size is 7 × 7 mm2 and the diameter of center circle is 5 mm.

Image of FIG. 2.
FIG. 2.

Temperature dependence of sheet electron density (a) and mobility (b). Circles correspond to Ti and diamonds to Al. Open and closed symbols are for increasing and decreasing temperatures, respectively. The arrows show the temperature increase/decrease directions.

Image of FIG. 3.
FIG. 3.

Temperature dependence of sheet electron density (a) and mobility (b). Circles correspond to Ti/Al and diamonds to Al/Ti. Open and closed symbols are increasing and decreasing temperatures, respectively. The arrows show the temperature increase/decrease directions.

Image of FIG. 4.
FIG. 4.

Depth profile of atomic concentration measured by AES, where (a)is as-deposited Ti/Al (15/50 nm), (b) vacuum annealed for Ti/Al (15/50 nm), and (c) vacuum annealed for Al/Ti (50/15 nm).

Tables

Generic image for table
Table I.

Prepared samples and obtained results by Hall measurements (ns and μ are the values measured at 300 K).

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/content/aip/journal/apl/101/26/10.1063/1.4773511
2012-12-27
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773511
10.1063/1.4773511
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