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A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy.X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, , was determined as 2.51 ± 0.05 eV using the Pb 4p3/2 and Zn 2p3/2 core levels as a reference. The conduction-band offset, , was, therefore, determined to be 0.59 ± 0.05 eV based on the above value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.
Received 20 July 2012Accepted 13 December 2012Published online 26 December 2012
Funding for this work was partially provided by the DoD AFOSR under Grant No. FA9550-12-1-0451, the DoD ARO under Grant No. W911NF-07-1-0587, NSF Grant No. DMR-0520550, and by Oklahoma OCAST program under Grant Nos. AR112-18 and AR082-052.
24.G. W. Cong, W. Q. Peng, H. Y. Wei.X. X. Han, J. J. Wu, X. L. Liu, Q. S. Zhu, Z. G. Wang, J. G. Lu, Z. Z. Ye, L. P. Zhu, H. J. Qian, R. Su, C. H. Hong, J. Zhong, K. Ibrahim, and T. D. Hu, Appl. Phys. Lett.88, 062110 (2006).