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(a) Energy band diagram of 2-BN GIM (i.e., with two layers of h-BN). The shaded regions are the projected bulk band structure of graphene (dark shaded area) and Cu(111) (light shaded area). Points marked by A and B denote the conduction band of the first and second h-BN layer, respectively. (b) PDOS for each of the four interfacial layers. In the case of h-BN layers, the energy region with zero PDOS corresponds to the potential barrier in the classical tunneling approximation. As for the graphene side (G), the arrow highlights a pronounced peak near illustrating the presence of an energy gap. The energy level is adjusted with respect to the Fermi energy (i.e., ).
I–V characteristics of (a) 2-BN and (b) GIM. The dashed lines represent 3rd order polynomial fits. The extracted curvature coefficients of 2-BN and are plotted in (c) and (d), respectively.
(a) Equivalent circuit of a GIM rectifier when tied to an antenna. is the amplitude of input sinusoidal signal and , and are antenna resistance, diode resistance, and diode capacitance, respectively. (b) Schematic illustration of a transistor utilizing a 2D crystal system. The envisioned device resembles a hot-carrier transistor. Abbreviations E, B, and C stand for emitter, base, and collector. The base-collector junction can also be formed by a combination of two 2D crystals instead of graphene/semiconductor as shown.
Calculated resistance and nonlinearity of the proposed GIM structures.
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