1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Two dimensional crystal tunneling devices for THz operation
Rent:
Rent this article for
USD
10.1063/1.4773514
/content/aip/journal/apl/101/26/10.1063/1.4773514
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773514

Figures

Image of FIG. 1.
FIG. 1.

(a) Energy band diagram of 2-BN GIM (i.e., with two layers of h-BN). The shaded regions are the projected bulk band structure of graphene (dark shaded area) and Cu(111) (light shaded area). Points marked by A and B denote the conduction band of the first and second h-BN layer, respectively. (b) PDOS for each of the four interfacial layers. In the case of h-BN layers, the energy region with zero PDOS corresponds to the potential barrier in the classical tunneling approximation. As for the graphene side (G), the arrow highlights a pronounced peak near illustrating the presence of an energy gap. The energy level is adjusted with respect to the Fermi energy (i.e., ).

Image of FIG. 2.
FIG. 2.

I–V characteristics of (a) 2-BN and (b) GIM. The dashed lines represent 3rd order polynomial fits. The extracted curvature coefficients of 2-BN and are plotted in (c) and (d), respectively.

Image of FIG. 3.
FIG. 3.

(a) Equivalent circuit of a GIM rectifier when tied to an antenna. is the amplitude of input sinusoidal signal and , and are antenna resistance, diode resistance, and diode capacitance, respectively. (b) Schematic illustration of a transistor utilizing a 2D crystal system. The envisioned device resembles a hot-carrier transistor. Abbreviations E, B, and C stand for emitter, base, and collector. The base-collector junction can also be formed by a combination of two 2D crystals instead of graphene/semiconductor as shown.

Tables

Generic image for table
Table I.

Calculated resistance and nonlinearity of the proposed GIM structures.

Loading

Article metrics loading...

/content/aip/journal/apl/101/26/10.1063/1.4773514
2012-12-28
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two dimensional crystal tunneling devices for THz operation
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/26/10.1063/1.4773514
10.1063/1.4773514
SEARCH_EXPAND_ITEM