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Schematics of the NIP GaAs/AlGaAs quantum well structures grown on (a) (111)B and (b) (111)A substrate. The voltage is positive when the diode is forward biased. (c) I-V characteristics of the NIP structure grown on (111)A substrate at T = 50 K. (d) Simplified band structure of the NIP device with the electric field E ∼ (VB + V)/d, where VB is the built-in electric field and V the applied bias.
Kerr rotation dynamics at T = 50 K for NIP samples grown on (a) (111)B and (b) (111)A substrates with different applied voltages. The symbols correspond to the experimental results and the full line to mono-exponential fits. Insets in (a) and (b): dependence of the electron spin lifetime with the applied voltage.
Photoluminescence (PL) circular polarization dynamics for three applied voltages at T = 50 K in the NIP structure grown on (111) A. The excitation laser energy is 1.563 eV and the detection energy corresponds to the PL peak displayed in the inset as a function of the applied voltage. The inset displays the PL peak shift as a function of the applied bias, resulting from quantum confined Stark effect.
Schematic representation of the crystal structure of the NIP samples grown on (111)A and (111)B substrates. The applied electric field E is represented here with the direction required to observe an increase of the electron spin relaxation time.
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