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Bipolar conductivity in nanocrystallized TiO2
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10.1063/1.4737016
/content/aip/journal/apl/101/3/10.1063/1.4737016
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737016
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band diagram of n-Si/TiO2/Ni (a) and p-Si/TiO2/Ni (b) structures in flat band mode. The same diagrams in accumulation (c), (f) and depletion mode (d), (e). / are flows of injected electrons/holes from Si intoTiO2, / are flows of injected electrons/holes from the metal into TiO2, / are recombination flows of injected electrons/holes from TiO2 into Si.

Image of FIG. 2.
FIG. 2.

Experimental I-V curves for n-Si/TiO2/Ni MIS structure for depletion and accumulation modes in the dark (thick line) and under illumination (thinline). TiO2 film thickness is 150 Å.

Image of FIG. 3.
FIG. 3.

Experimental I-V curves for p-Si/TiO2/Ni MIS structure for depletion and accumulation modes in the dark (thick line) and under illumination (thinline). TiO2 film thickness is 150 Å.

Image of FIG. 4.
FIG. 4.

(a) Flows of charge carriers in n-Si/TiO2/Ni MIS structure with the positive bias +V applied to the Ni contact (a). (b) The same diagram of p-Si/TiO2/Ni MIS structure with the negative bias −V applied to the Ni contact. Dashed arrows show the flows of not recombined charge carriers.

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/content/aip/journal/apl/101/3/10.1063/1.4737016
2012-07-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bipolar conductivity in nanocrystallized TiO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737016
10.1063/1.4737016
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