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Matrix of 24 samples containing different morphologies and densities of oxide precipitates. White rectangles indicate samples predominantly containing unstrained precipitates; grey rectangles are for those containing predominantly strained precipitates. Hatching indicates the presence of extended defects in addition to the strained precipitates: diagonal lines for dislocations ; crossed diagonal lines for stacking faults and dislocations .
Spectrally resolved photoluminescence of a surface-passivated silicon sample containing oxide precipitates. Luminescence is detected by an InGaAs camera equipped with different optical band pass filters. Absolute intensities are obtained by scaling the camera data to spectroradiometer measurements.
Wavelength integrated (a) band-to-band and (b) sub-bandgap luminescence intensity as a function of precipitate growth time for different nucleation times.
Integrated sub-bandgap luminescence versus the density of strained oxide precipitates. Open symbols denote specimens in which dislocations and stacking faults were found to surround some precipitates.
An energy level diagram to show the possible origin of PL from silicon containing oxide precipitates. Radiative emission is proposed to occur upon electron transitions between bands of defect states associated with the strained precipitates. The same bands also give rise to SRH recombination.
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