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WG mode bulk resonator: (a) Circuit schematic of the electrical characterization configuration applied to device, (b) finite element (FE) simulation of the vibration mode shape, and (c) SEM image of the fabricated device.
The ab initio simulations of shear deformation: (a) original silicon lattice; (b) silicon lattice under shear deformation; and (c) simulated shear stress-strain relation in the direction within the (100) plane.
Measured and simulated frequency responses at 50 V DC bias when nonlinearity is negligible (RF power −10 dBm) and prominent (RF power 10 dBm).
Measured frequency responses under various DC bias at fixed RF power (5 dBm). Inset: measured and simulated critical driving conditions of the device.
Extracted linear and higher-order shear coefficients of SCS along the direction within (100) plane.
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