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(a) The XRD spectra of the HfO2/chemical oxide/Si stacks with and without Cl2 plasma treatment for 60 s after a PDA at 650 °C. (b) The XRD spectra of HfO2/chemical oxide/Si with Cl2 plasma treatment after a PDA from 550–750 °C.
(a) Shows the TOF-SIMS analysis of depth profiles of chlorine, for the sample with Cl2 plasma treatment for 60 s. (b) Shows the conventional high-k dielectric engineering and (c) shows the mechanisms of higher-k t-HfO2 formation.
The cross-sectional TEM of MOS device (a) with Cl2 plasma treatment for 60 s and (b) without one treatment.
The band gaps of HfO2 dielectric were evaluated by ultra-violet photoelectron spectroscopy (UPS).
The (a) C-V and (b) I-V curves for high-k gated MOS devices with and without Cl2 plasma treatment for 60 s.
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