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A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices
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10.1063/1.4737393
/content/aip/journal/apl/101/3/10.1063/1.4737393
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737393
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Figures

Image of FIG. 1.
FIG. 1.

(a) The XRD spectra of the HfO2/chemical oxide/Si stacks with and without Cl2 plasma treatment for 60 s after a PDA at 650 °C. (b) The XRD spectra of HfO2/chemical oxide/Si with Cl2 plasma treatment after a PDA from 550–750 °C.

Image of FIG. 2.
FIG. 2.

(a) Shows the TOF-SIMS analysis of depth profiles of chlorine, for the sample with Cl2 plasma treatment for 60 s. (b) Shows the conventional high-k dielectric engineering and (c) shows the mechanisms of higher-k t-HfO2 formation.

Image of FIG. 3.
FIG. 3.

The cross-sectional TEM of MOS device (a) with Cl2 plasma treatment for 60 s and (b) without one treatment.

Image of FIG. 4.
FIG. 4.

The band gaps of HfO2 dielectric were evaluated by ultra-violet photoelectron spectroscopy (UPS).

Image of FIG. 5.
FIG. 5.

The (a) C-V and (b) I-V curves for high-k gated MOS devices with and without Cl2 plasma treatment for 60 s.

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/content/aip/journal/apl/101/3/10.1063/1.4737393
2012-07-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737393
10.1063/1.4737393
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