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Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications
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10.1063/1.4737443
/content/aip/journal/apl/101/3/10.1063/1.4737443
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737443

Figures

Image of FIG. 1.
FIG. 1.

(a) The 1 × 1 μm2 AFM images of sample A and (b) the STEM image of sample B taken in bright-field condition.

Image of FIG. 2.
FIG. 2.

(a) The room-temperature PL spectra at a pumping intensity of 0.5 W/cm2, and (b) the PL peak energies of samples A and B as a function of the pumping intensity.

Image of FIG. 3.
FIG. 3.

(a) The band diagram near a standard QR and (b) the band diagram near a pair of coupled QRs at room temperature.

Image of FIG. 4.
FIG. 4.

(a) The decay traces of room-temperature TRPL for samples A and B, and (b) the room-temperature PL spectra of single-layer InAs QDs (2.4 monolayers) and sample B.

Tables

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Table I.

The wafer structures of samples A and B.

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/content/aip/journal/apl/101/3/10.1063/1.4737443
2012-07-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737443
10.1063/1.4737443
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