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Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices
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10.1063/1.4737637
/content/aip/journal/apl/101/3/10.1063/1.4737637
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737637
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Figures

Image of FIG. 1.
FIG. 1.

(a) UPS spectra of the MLG films (as-grown MLG, 5 mM AuCl3-MLG, and 20 mM AuCl3-MLG) with different Au NP concentrations. (b) The Raman spectra and (c) transmittance characteristics of the MLGs (as-grown MLG, 5 mM AuCl3-MLG, and 20 mM AuCl3-MLG). (d) The sheet resistance and hole-carrier density measured using the Hall method.

Image of FIG. 2.
FIG. 2.

(a) Schematic illustration of MLG-electrode GaN-based LED device. (b) A plan-view SEM image of a GaN-based LED device. The insets show an SEM image of the MLG with Au NPs (top) and a TEM image of the multiple quantum wells (bottom). (c) A magnified TEM image and the EDX mapping of the MQWs.

Image of FIG. 3.
FIG. 3.

(a) I-V curves of the GaN-based LEDs with as-grown MLG, 5 mM AuCl3-MLG, and 20 mM AuCl3-MLG. (b) The EL intensity of the MLG-electrode GaN-based LEDs as a function of the injection currents. (c) The EL intensity of the MLG-electrode GaN-based LEDs measured at 500 μA. (d) The integrated EL intensity of the MLG-electrode GaN-based LEDs as a function of the injection current.

Image of FIG. 4.
FIG. 4.

(a) J-V curves of the GaN-based SCs with as-grown MLG, 5 mM AuCl3-MLG, and 20 mM AuCl3-MLG under AM 1.5 G irradiation conditions. The inset shows the zoomed-in J-V curve near the current density of 0 mA/cm2. (b) EQE of the fabricated MLG-electrode, GaN-based SCs. The shaded area denotes the solar spectrum.

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/content/aip/journal/apl/101/3/10.1063/1.4737637
2012-07-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737637
10.1063/1.4737637
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