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Eco-friendly electron beam lithography using water-developable resist material derived from biomass
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10.1063/1.4737639
/content/aip/journal/apl/101/3/10.1063/1.4737639
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737639
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Figures

Image of FIG. 1.
FIG. 1.

Schematic of tri-layer processes of eco-friendly EB lithography using water development.

Image of FIG. 2.
FIG. 2.

Chemical structures of base polymers in (a) thin water-developable resist material derived from biomass (m: approximately 1.1 and n: approximately 23), (b) thin hardmask (m: 60; n: 15; and p: 25 mol. %), and (c) thicker etching transfer layer (u: approximately 5.9).

Image of FIG. 3.
FIG. 3.

Resist line pattern images of (a) 400 nm line and 600 nm space and (b) 200 nm line and 800 nm space after water development process in dose of 7.0 μC/cm2.

Image of FIG. 4.
FIG. 4.

Film shrinkages of thickness of resist materials in EB irradiation process.

Image of FIG. 5.
FIG. 5.

Dependence of Ohnishi parameter on CF4 etch selectivity of resist material with hardmask layer.

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/content/aip/journal/apl/101/3/10.1063/1.4737639
2012-07-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Eco-friendly electron beam lithography using water-developable resist material derived from biomass
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737639
10.1063/1.4737639
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