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Schematic of tri-layer processes of eco-friendly EB lithography using water development.
Chemical structures of base polymers in (a) thin water-developable resist material derived from biomass (m: approximately 1.1 and n: approximately 23), (b) thin hardmask (m: 60; n: 15; and p: 25 mol. %), and (c) thicker etching transfer layer (u: approximately 5.9).
Resist line pattern images of (a) 400 nm line and 600 nm space and (b) 200 nm line and 800 nm space after water development process in dose of 7.0 μC/cm2.
Film shrinkages of thickness of resist materials in EB irradiation process.
Dependence of Ohnishi parameter on CF4 etch selectivity of resist material with hardmask layer.
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