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Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer
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10.1063/1.4737874
/content/aip/journal/apl/101/3/10.1063/1.4737874
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737874
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Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional schemantic profiles of two type structures grown on Si(110) substrates in this study, (a) type I structure: direct growth of GaN on an AlN buffer layer without an AlN/GaN SLs interlayer, (b) type II structrue: GaN growth on an AlN buffer layer with an AlN/GaN SLs interlayer.

Image of FIG. 2.
FIG. 2.

Optical microscope images of two 1.3-μm-thick GaN surfaces (a) without (type I structure) and (b) with (type II structure) an AlN/GaN SLs interlayer. Cracked and crack-free GaN surfaces are clearly observed.

Image of FIG. 3.
FIG. 3.

ω-2θ scan spectra of GaN (0002) diffraction peaks measured by HRXRD from the type I and type II structure samples, showing the strain converting effect from a tensile to a compressive state in the GaN. The figure inset illustrates a cross-sectional SEM image showing the sample structure.

Image of FIG. 4.
FIG. 4.

Micro-Raman spectra of the type II sample in Fig. 3 and a bulk GaN reference sample at room-temperature. Comparing to the E2 (high) peak position of the bulk GaN, a double E2 (high) peak feature from the type II sample shows the different strain states in the sample, supporting the interpretation of HRXRD results in Fig. 3.

Image of FIG. 5.
FIG. 5.

Dependence of the strain in GaN films on the average Al composition of the thin AlN/GaN SLs interlayer. The average Al composition is simply calculated by the AlN and the GaN thicknesses in the SLs measured by HRXRD.

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/content/aip/journal/apl/101/3/10.1063/1.4737874
2012-07-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737874
10.1063/1.4737874
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