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Applicability of continuum absorption in semiconductor quantum wells to absolute absorption-strength standards
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10.1063/1.4737900
/content/aip/journal/apl/101/3/10.1063/1.4737900
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737900

Figures

Image of FIG. 1.
FIG. 1.

Coulomb enhancement factor in the continuum-state region ( ) calculated for QWs with finite well thicknesses having various values of q-2D-exciton binding energy . Parameters for the GaAs (001) QW were used. The right vertical axis indicates the corresponding absorbance obtained by taking into account the correction factors summarized in Table I.

Image of FIG. 2.
FIG. 2.

Coulomb enhancement factor at the band edge as a function of the q-2D-exciton binding energy, calculated for QWs with finite well thicknesses. Parameters for the GaAs (001) QW were used.

Tables

Generic image for table
Table I.

Band parameters for GaAs and InP QWs (Refs. 18 and 19). Derived in-plane effective masses, dipole moments, and correction factors are also listed for each QW orientation. Arrows indicate that the values are the same as those in the left column.

Generic image for table
Table II.

Representative expressions of in-plane effective masses of heavy hole (hh) and squared dipole moments between electron and hh in (001) and (110) QWs using Luttinger’s parameters , , and (Ref.20).

Generic image for table
Table III.

Absorbance at the band edge () for single GaAs and InP QWs with finite thicknesses. Absorbance in the free-electron (FE) model and in the ideal-2D model are also listed for comparison.

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/content/aip/journal/apl/101/3/10.1063/1.4737900
2012-07-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Applicability of continuum absorption in semiconductor quantum wells to absolute absorption-strength standards
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/3/10.1063/1.4737900
10.1063/1.4737900
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