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Magnetization loops obtained at 300 K with H parallel to the , , and  directions of GaN. The solid symbols are the experimental data and the lines guides to the eye. The bottom right inset shows the in-plane hysteresis loops for low magnetic fields. The upper left inset shows an AFM micrograph (5 × 5 μm2) of the as-grown Fe layer.
Optical micrograph (top view) and schematic structure of an Fe/GaN:Si Schottky diode.
Current-voltage characteristic of three Fe/GaN Schottky diodes with different doping levels at 295 K (a) and 80 K (b).
(a) Temperature dependence of the I-V characteristic of the Fe/GaN:Si Schottky diode between 20 and 295 K. (b) Current-voltage characteristics of the Schottky diode at 20 K. The open circles represent the experimental data, the solid lines are the fits to Eqs. (1) and (2), and the dashed line illustrates the effect of the series resistance. (c) Temperature dependence of the forward ideality factor. The solid line shows the fit to . In the inset, the open circles represents the temperature dependence of , calculated as nkT, and the solid line indicates the value of derived from the fit. (d) Plot of 1/C2 versus V for annealed and as-grown Fe/GaN:Si Schottky diodes with a Si concentration of .
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