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Self-heating enhanced charge trapping effect for InGaZnO thin film transistor
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10.1063/1.4733617
/content/aip/journal/apl/101/4/10.1063/1.4733617
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4733617
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Figures

Image of FIG. 1.
FIG. 1.

(a) Linear (measured Vd = 0.1 V) transfer Id-Vg curves under self-heating stress of Vg = 25 V, Vd = 15 V, and Vs = 0 V with channel width 20 μm and (b) 50 μm. (c) Saturation Id-Vg (measured Vd = 10 V) characteristics measured with S/D interchange and without S/D interchange before and after self-heating stress with channel width 20 μm and (d) 50 μm.

Image of FIG. 2.
FIG. 2.

(a) Dependence of stress time and threshold voltage shift under self-heating stress and gate-bias stress for the device with channel width of 20 μm and 50 μm. (b) Saturation Id-Vg (measured Vd = 10 V) (W = 20 μm) characteristics measured with S/D interchange and without S/D interchange before and after gate-bias stress.

Image of FIG. 3.
FIG. 3.

(a) Dependence of stress time and threshold voltage shift for gate-bias stress under different temperatures. (b) The plot of ln τ trap. as a function of reciprocal temperature (1000/T) under gate-bias stress and self-heating stress. Inset shows the schematic energy band diagram for electron trapping through thermionic-field emission.

Image of FIG. 4.
FIG. 4.

(a) Dependence of stress time and threshold voltage shift for DC self-heating stress and AC self-heating stress (the inset shows the schematic diagram of the AC bias waveform). (b) Comparison of the Vt degradation under self-heating stress with different AC operation waveforms (the inset shows the pulse waveform of Ton = Toff = Tr = Tf = 1, 10, 100 μs).

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/content/aip/journal/apl/101/4/10.1063/1.4733617
2012-07-23
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-heating enhanced charge trapping effect for InGaZnO thin film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4733617
10.1063/1.4733617
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