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In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation
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10.1063/1.4737938
/content/aip/journal/apl/101/4/10.1063/1.4737938
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4737938
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Figures

Image of FIG. 1.
FIG. 1.

(a)–(d) Bright-field (BF) TEM images of 30° partial segments after electron irradiation with ( ). Irradiation time is (a) 0, (b) 60, (c) 120, and (d) 180 s. These snap-shot images were acquired in sequence from (a) to (d) with . A DF image of the 30° segments taken with g = (e) or (f) , where the insets indicate the reflection conditions. (g) A structural model of the 30°-Si(g) partials. (h) A sketch of the dislocation line shapes in (a)–(d).

Image of FIG. 2.
FIG. 2.

(a) and (b) Sequential BF-TEM images of tilted-30°-Si(g) partials under electron irradiation for 3 s with ( ). (c)A BF-TEM image of the partials kept in the dark (without electron irradiation) for 60 min after imaging (b). (d) A sketch of the dislocation line shape of the partials.

Image of FIG. 3.
FIG. 3.

Reversible change of a dislocation loop under different excitation conditions (BF, ). The images were acquired in sequence from (a) to (e) with .

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/content/aip/journal/apl/101/4/10.1063/1.4737938
2012-07-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4737938
10.1063/1.4737938
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