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(a) Schematic diagram for the general layer structure of AlN/Al0.65Ga0.35N QWs. (b) Polarization PL spectra of AlN template. The experimental geometry was depicted in the inset, where the electrical field of PL emission (E) can be selected either parallel (∥) or perpendicular (⊥) to the c axis.
Polarization low temperature (10 K) PL spectra of AlN/Al0.65Ga0.35N QW samples with well width varying from 1 to 3 nm and a fixed barrier width of 10 nm.
The degree of polarization P as a function of well width in AlN/Al0.65Ga0.35N QWs.
Integrated PL emission intensities for E ⊥ c and E ∥ c as a function of well width of AlN/Al0.65Ga0.35N QWs measured at 10 K.
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