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(a) Schematics of In0.18Ga0.82N/GaN QD laser heterostructure grown byplasma-assisted MBE; (b) photoluminescence spectra of eight pairs of In0.18Ga0.82 N/GaN QD heterostructure measured at different temperatures; and (c) carrier lifetimes obtained from time resolved PL measurements, with a typical PL decay at 280 K in the inset.
(a) Light-current characteristics of In0.18Ga0.82N/GaN QD ridge waveguide laser measured under pulsed bias. Inset shows electroluminescence spectra of QD laser above threshold along with spontaneous emission (PL) of In0.18Ga0.82N QDs; (b) light-current characteristics measured with CW bias. Inset shows variation of peak emission wavelength with injection current density.
(a) Cavity length dependence of inverse differential quantum efficiency; and (b) variation of threshold current density with inverse cavity length.
Laser output polarization as a function of injection current density.
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