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Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ = 420 nm) on c-plane GaN substrate
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10.1063/1.4738499
/content/aip/journal/apl/101/4/10.1063/1.4738499
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4738499
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematics of In0.18Ga0.82N/GaN QD laser heterostructure grown byplasma-assisted MBE; (b) photoluminescence spectra of eight pairs of In0.18Ga0.82 N/GaN QD heterostructure measured at different temperatures; and (c) carrier lifetimes obtained from time resolved PL measurements, with a typical PL decay at 280 K in the inset.

Image of FIG. 2.
FIG. 2.

(a) Light-current characteristics of In0.18Ga0.82N/GaN QD ridge waveguide laser measured under pulsed bias. Inset shows electroluminescence spectra of QD laser above threshold along with spontaneous emission (PL) of In0.18Ga0.82N QDs; (b) light-current characteristics measured with CW bias. Inset shows variation of peak emission wavelength with injection current density.

Image of FIG. 3.
FIG. 3.

(a) Cavity length dependence of inverse differential quantum efficiency; and (b) variation of threshold current density with inverse cavity length.

Image of FIG. 4.
FIG. 4.

Laser output polarization as a function of injection current density.

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/content/aip/journal/apl/101/4/10.1063/1.4738499
2012-07-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ = 420 nm) on c-plane GaN substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4738499
10.1063/1.4738499
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