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(a) Normalized in-plane magnetization curves for CoFe2O4 single layers (5 and 15 nm) measured at room temperature. (b) In-plane magnetic hysteresis loops of a CoFe2O4 (5 nm) layer, measured by changing the direction of the applied magnetic field, showing the absence of in-plane magnetic anisotropy.
TMR curves of two Pt(20 nm)/CoFe2O4(3 nm)/γ-Al2O3(1.5 nm)/Co(10–15 nm) tunnel junctions. (a) TMR curve at 2 K of a microjunction (junction area A = 6 × 2 μm2) with an applied bias voltage of 200 mV. (b) TMR curve at room temperature of a nanojunction (junction area A = 5 × 5 nm2) with an applied bias voltage of 70 mV. The polarization PCoFe2O4 of the tunnel current extracted from the TMR is indicated for both measurements. The bias voltage at 2 K has been chosen to get a maximum TMR value, whereas the bias voltage dependence is less pronounced at room temperature, in agreement with previous studies.2
Resistance curves at 200 K of a Pt(20 nm)/CoFe2O4(3 nm)/γ-Al2O3(1.5 nm)/Co(10 nm) nanojunction (junction area = 5 × 5 nm2) with an applied bias voltage of 70 mV. The magnetic field is applied in the films plane along the (a) 0°, (b) 30°, (c) 60°, and (d) 90° axis. (Lines with circles) Calculated resistances for θ = 0° (a), 30° (b), 60° (c), and 90° (d) (θ = relative angle between the Co and CoFe2O4 magnetizations).
Angular dependence of the remanent/saturation magnetizations ratio for CoFe2O4 thin films measured by VSM and CoFe2O4 monodomain extracted from spin-dependent transport.
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