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Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells
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10.1063/1.4738791
/content/aip/journal/apl/101/4/10.1063/1.4738791
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4738791
/content/aip/journal/apl/101/4/10.1063/1.4738791
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/content/aip/journal/apl/101/4/10.1063/1.4738791
2012-07-27
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4738791
10.1063/1.4738791
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