1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes
Rent:
Rent this article for
USD
10.1063/1.4738886
/content/aip/journal/apl/101/4/10.1063/1.4738886
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4738886
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Reverse IV characteristics of 200 A JBSDs: (a) sample A with nano-scale pits and (b) sample B without pits.

Image of FIG. 2.
FIG. 2.

Emission microscopy images corresponding to leakage points in 200 A SBDs: (a) sample A with nano-scale pits and (b) sample B without pits. The scales in (a) and (b) are same.

Image of FIG. 3.
FIG. 3.

Surface morphology of sample A with nano-scale pits in Fig. 2(a): (a) high sensitivity emission microscopy image, (b) optical micrograph, and (c) AFM image at point 1 in (a).

Image of FIG. 4.
FIG. 4.

Surface morphology of sample B without nano-scale pits measured by AFM in Fig. 2(b): (a) point A, (b) point B, and (c) point C.

Image of FIG. 5.
FIG. 5.

Comparison of theoretical reverse IV curves with and without nano-scale pits. These data are referenced from Ref. 20.

Loading

Article metrics loading...

/content/aip/journal/apl/101/4/10.1063/1.4738886
2012-07-24
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4738886
10.1063/1.4738886
SEARCH_EXPAND_ITEM