Full text loading...
XRDI image of cracks introduced by cyclic handling damage to a 300 mm silicon wafer. BedeScan™ image 115 reflection. Fracture occurred at the crack arrowed.
White beam synchrotron x-radiation diffraction image of a pair of cracks from a 50 N edge indent. [The coordinate system refers to Eq. (3)].
Thermal stress distribution during the first few seconds of the RTA cooling stage, given in cylindrical coordinates where (a) shows the values of the tangential component and (b) shows the values of the radial component. The type of anneal simulated is a 800 °C spike. Inset: 200 mm diameter wafer that fractured during RTA following edge indentation at 90°, 180°, and 270° with respect to the notch. Fracture profile matches closely that of the (b) simulation.
Observed failure probability f versus the predicted failure probability r derived from the model on the basis of the XRDI and thermal measurements on individual wafers. (a) Data from wafers measured at the Diamond Light Source and subsequently thermally treated. (b) Data from wafers which had κ values derived from average tip width of cracks measured by XRDI.
Article metrics loading...