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(a) Sketch of the MD development in GaAs/AlAs heterostructures. The angle between the dislocation line and its Burgers vector is , and the angle between the Burgers vector and a line in the plane of the heterointerface perpendicular to the dislocation line is . (b) Sketch of the dislocation array development on the (111) slip plane, B and C denote different layers.
(a) Calculated temperature dependence of the lattice mismatch of AlAs1− x P x for different AlP layer thicknesses as indicated. Parameters are taken from Table I. (b) Real space transmission images of the investigated microcavities with different strain compensation. Intensity on a linear color scale as indicated. (c) cross-hatch density as function of AlP layer thickness. Error bars for the layer thickness are estimated from the shutter transit times.
Real space transmission images of the samples with no strain compensation (left column) and optimum strain compensation (right column). Color scale as in Fig. 2. Excitation energy relative to band edge were 0 meV in (a), 1 meV in (b), 6 meV in the inset of (b), and 0–10 meV in (c). Excitation wavevectors were in (a), in (b), in the inset of (b), and in (c).
GaAs, AlAs, and AlP lattice constants a, thermal expansion coefficients α, and refractive indices n at 850 nm wavelength at room temperature.
Parameters of the investigated microcavity samples.
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