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First order Raman spectra of undoped and Si-doped hexagonal AlGaN with 10% and 28% Al-content, respectively.
Raman spectra in the area of the LO-Raman mode of undoped and Si-doped Al0.1Ga0.9 N (squares) and related fits (straight lines). The spectra consist of a substrate related peak around 750 cm−1, a linear background, and the LOPC+ mode of AlGaN (dotted line).
Calculated Raman shift of the LOPC+ [(a), (c)] and LOPC− [(b), (d)] mode depending on the carrier concentration for AlGaN (top) and InGaN (bottom) with different Ga-contents.
Charge carrier concentrations as determined by Hall measurements (nHall), fitted Raman spectra using Eq. (1) (nRaman), and using the undamped model as described by Eq. (4) (nundamped). For convenience, the plasma frequency (ωp) and the position of the LOPC+ mode are also listed.
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