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Phonon plasmon interaction in ternary group-III-nitrides
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10.1063/1.4739415
/content/aip/journal/apl/101/4/10.1063/1.4739415
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739415

Figures

Image of FIG. 1.
FIG. 1.

First order Raman spectra of undoped and Si-doped hexagonal AlGaN with 10% and 28% Al-content, respectively.

Image of FIG. 2.
FIG. 2.

Raman spectra in the area of the LO-Raman mode of undoped and Si-doped Al0.1Ga0.9 N (squares) and related fits (straight lines). The spectra consist of a substrate related peak around 750 cm−1, a linear background, and the LOPC+ mode of AlGaN (dotted line).

Image of FIG. 3.
FIG. 3.

Calculated Raman shift of the LOPC+ [(a), (c)] and LOPC [(b), (d)] mode depending on the carrier concentration for AlGaN (top) and InGaN (bottom) with different Ga-contents.

Tables

Generic image for table
Table I.

Charge carrier concentrations as determined by Hall measurements (nHall), fitted Raman spectra using Eq. (1) (nRaman), and using the undamped model as described by Eq. (4) (nundamped). For convenience, the plasma frequency (ωp) and the position of the LOPC+ mode are also listed.

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/content/aip/journal/apl/101/4/10.1063/1.4739415
2012-07-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phonon plasmon interaction in ternary group-III-nitrides
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739415
10.1063/1.4739415
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