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Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
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10.1063/1.4739419
/content/aip/journal/apl/101/4/10.1063/1.4739419
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739419
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Integrated PL intensity as a function of excitation power density at (a) 10 K and (b) 295 K; gray solid lines indicate slope of 1 and the inset of (b) displays the PL-IQE vs. the number of 3 nm DHs in the active region; (c) PL efficiencies of multi-3 nm DHs vs. excitation power density at room temperature.

Image of FIG. 2.
FIG. 2.

The integrated EL intensity dependence on current density (the grey-sold line indicates slope of 1); the inset shows EL efficiencies of multi-3 nm DHs vs. injected carrier density.

Image of FIG. 3.
FIG. 3.

EL efficiencies comparison for quad 3 nm DH, 9 nm DH, and coupled MQW (six period In0.15Ga0.85 N (2 nm)/In0.06Ga0.94 N (3 nm)) LEDs.

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/content/aip/journal/apl/101/4/10.1063/1.4739419
2012-07-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739419
10.1063/1.4739419
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