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Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
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10.1063/1.4739431
/content/aip/journal/apl/101/4/10.1063/1.4739431
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739431
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photoluminescence spectra of AlxGa1−xN quantum wells (QWs) at 4 K under an excitation power density of 28 kW/cm2. (a) An undoped Al0.58Ga0.42N-QW (QW-A), an Al0.58Ga0.42N-QW with Si doping only into barrier layers (QW-B), an Al0.58Ga0.42N-QW with Si doping only into well layers (QW-C), and an Al0.58Ga0.42N-QW with Si doping into both well and barrier layers (QW-D). (b) Al0.60Ga0.40N-QWs with different Si concentrations of the well layers of 3.8 × 1017, 7.6 × 1017, and 1.1 × 1018 cm−3.

Image of FIG. 2.
FIG. 2.

The internal quantum efficacy (IQE) curves at 4 K (closed circles) and 300 K (open circles) obtained from an Al0.58Ga0.42N-QW with Si doping into both the well and barrier layers. The IQE curves are normalized by the maximum value at 4 K. The maximum value of the IQE at 300 K is estimated to be 40%.

Image of FIG. 3.
FIG. 3.

The maximum value of the internal quantum efficiency at 300 K obtained from an undoped Al0.58Ga0.42N-QW (QW-A), an Al0.58Ga0.42N-QW with Si doping only into barrier layers (QW-B), an Al0.58Ga0.42N-QW with Si doping only into well layers (QW-C), and an Al0.58Ga0.42N-QW with Si doping into both well and barrier layers (QW-D) under (a) band-to-band excitation of barriers and (b) selective excitation of well layers.

Image of FIG. 4.
FIG. 4.

The maximum value of the internal quantum efficiency at 300 K obtained from Si-doped AlGaN-QWs as a function of Si concentration in thewell layers. The closed circle and the open square show the IQE of Al0.60Ga0.40N-QWs and Al0.58Ga0.42N-QWs, respectively. The dashed line is included as a visual guide.

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/content/aip/journal/apl/101/4/10.1063/1.4739431
2012-07-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739431
10.1063/1.4739431
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