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(a) Schematic diagram of the epitaxial LEDs with the shallow QWs structure. (b) Schematic band profiles of the shallow QWs structure and the active region of LEDs with shallow TQW (Sample A), (c) LEDs with shallow RQW (Sample B), and (d) conventional LEDs (Sample C). Diagram is not to scale.
(a) Current-voltage characteristics of Sample A, B, and C. (b) Integrated EL intensity of Sample A, B, and C as a function of injection current.
Reciprocal space mapping around GaN asymmetric (10.5) diffraction of (a) Sample A and (b) Sample C.
Electroluminescence spectra of (a) Sample A (with shallow TQW), (b) Sample B (with shallow RQW), (c) Sample C (w/o. shallow QWs) at various injection currents. (d) The magnitude of the blue-shift and the FWHM of the EL emission peak in the three samples as a function of injection current.
Summary of the structural parameters of the shallow QWs in three samples extracted from the XRD (004) ω/2θ scan measurements and the corresponding performances of LED devices.
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