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Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy
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10.1063/1.4739470
/content/aip/journal/apl/101/4/10.1063/1.4739470
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739470
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Changes in PL intensity of the 1.014-eV peak of the CuPL center with diffusion temperature for unetched (circles) and etched samples (squares).

Image of FIG. 2.
FIG. 2.

Change in DLTS spectrum with diffusion temperature of unetched samples. Magnifications and concentration scales are indicated in the figure.

Image of FIG. 3.
FIG. 3.

Change in DLTS spectrum with etched thickness for the sample diffused at 700 °C. Magnifications and concentration scales are indicated in the figure.

Image of FIG. 4.
FIG. 4.

Change in DLTS spectrum with diffusion temperature for the samples etched approximately 50 μm thickness of the surface. Magnifications and a concentration scale are indicated in the figure.

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/content/aip/journal/apl/101/4/10.1063/1.4739470
2012-07-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739470
10.1063/1.4739470
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