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Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
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10.1063/1.4739513
/content/aip/journal/apl/101/4/10.1063/1.4739513
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739513
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Electron density dependence of the 2DEG mobility for the Si0.86Ge0.14 sample measured at T = 0.3 K.

Image of FIG. 2.
FIG. 2.

(a) Schematic of the Si0.86Ge0.14/strained Si/Si0.86Ge0.14 heterostructure grown by UHVCVD. (b) A XTEM image of the 2DEG sample with Si0.86Ge0.14 relaxed buffer layer. The inset shows an enlarged TEM image of the quantum well.

Image of FIG. 3.
FIG. 3.

Effects of the Ge concentration in the relaxed buffer layer on the density of threading dislocations and the surface roughness. The area of AFM measurement is 2 μm × 2 μm.

Image of FIG. 4.
FIG. 4.

The 2DEG mobility as a function of Ge concentration of the relaxed buffer layer.

Image of FIG. 5.
FIG. 5.

The 2DEG mobility vs. SiGe barrier thickness for the samples with Si0.82Ge0.18 relaxed buffers.

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/content/aip/journal/apl/101/4/10.1063/1.4739513
2012-07-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739513
10.1063/1.4739513
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