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Electron density dependence of the 2DEG mobility for the Si0.86Ge0.14 sample measured at T = 0.3 K.
(a) Schematic of the Si0.86Ge0.14/strained Si/Si0.86Ge0.14 heterostructure grown by UHVCVD. (b) A XTEM image of the 2DEG sample with Si0.86Ge0.14 relaxed buffer layer. The inset shows an enlarged TEM image of the quantum well.
Effects of the Ge concentration in the relaxed buffer layer on the density of threading dislocations and the surface roughness. The area of AFM measurement is 2 μm × 2 μm.
The 2DEG mobility as a function of Ge concentration of the relaxed buffer layer.
The 2DEG mobility vs. SiGe barrier thickness for the samples with Si0.82Ge0.18 relaxed buffers.
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