Full text loading...
(a) θ-2θ XRD patterns and (b) plane-view FESEM images of the Cu2O films deposited on SiO2/Si substrates at room temperature (S1), 250 °C (S2), and 500 °C (S3).
Room temperature electrical transport properties of the Cu2O films (samples S1–S3). ρ is the resistivity, is the hole concentration, and μ h is the hole mobility.
(a) Plane-view TEM image, (b) HRTEM image of the bulk of an individual grain and (c) its in-situ FFT pattern, (d) Cu 2p XPS spectrum, and (e) temperature-dependence of the hole concentration of sample S1.
(a) Drain current-drain voltage (-) characteristics of a TFT based on an active layer of the RT-grown Cu2O film on PET. The gate voltage () varied from 0 to −24 V in steps of −6 V. (b) - plots of the same device at a fixed of +5 V. Inset in (a) depicts the schematic device structure of the Cu2O-based TFTs.
Article metrics loading...