1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Room temperature fabrication of p-channel Cu2O thin-film transistors on flexible polyethylene terephthalate substrates
Rent:
Rent this article for
USD
10.1063/1.4739524
/content/aip/journal/apl/101/4/10.1063/1.4739524
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739524
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) θ-2θ XRD patterns and (b) plane-view FESEM images of the Cu2O films deposited on SiO2/Si substrates at room temperature (S1), 250 °C (S2), and 500 °C (S3).

Image of FIG. 2.
FIG. 2.

Room temperature electrical transport properties of the Cu2O films (samples S1–S3). ρ is the resistivity, is the hole concentration, and μ h is the hole mobility.

Image of FIG. 3.
FIG. 3.

(a) Plane-view TEM image, (b) HRTEM image of the bulk of an individual grain and (c) its in-situ FFT pattern, (d) Cu 2p XPS spectrum, and (e) temperature-dependence of the hole concentration of sample S1.

Image of FIG. 4.
FIG. 4.

(a) Drain current-drain voltage (-) characteristics of a TFT based on an active layer of the RT-grown Cu2O film on PET. The gate voltage () varied from 0 to −24 V in steps of −6 V. (b) - plots of the same device at a fixed of +5 V. Inset in (a) depicts the schematic device structure of the Cu2O-based TFTs.

Loading

Article metrics loading...

/content/aip/journal/apl/101/4/10.1063/1.4739524
2012-07-27
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature fabrication of p-channel Cu2O thin-film transistors on flexible polyethylene terephthalate substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/4/10.1063/1.4739524
10.1063/1.4739524
SEARCH_EXPAND_ITEM