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Schematic of the NP-LED device structure depicting the axial n-GaAs/i-InGaAs/p-GaAs heterostructure and InGaP shell.
(a) SEM images of NPs as grown on the GaAs substrate. (b) Exposed NP tips after planarization/etch-back of BCB and selective InGaP chemical etch. (c) NP tips coated with ITO contact. (d) NP tips coated with Cr/Au contact layer.
(a) Semi-log plot of the axial-only diode I-V characteristic. (b) Semi-log plot of axial/core-shell diode I-V characteristic (solid line) and C−2 -V characteristic (dashed line) with extracted NP doping level of ∼ 4 × 1017 cm−3 and substrate doping of 7 × 1018 cm−3. (c) Detailed I-|V| characteristic showing ideal diode fit (dashed line) with an ideality factor of η = 1.67 and series resistance Rs = 165 Ω.
Current dependent EL spectra with emission peak at 1290 nm. Inset shows power output vs. input current with linear behavior at low current densities followed by saturation under high-level injection.
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