Full text loading...
Monovalent bonding (a) and divalent bonding in closed (b) and open (c) configurations.
Methodology for the conductance analysis. Pristine SWNTs were functionalized in solution using carbene reactions (a → b). Field-effect transistors were fabricated with individualized functionalized SWNTs (b → c). The devices were thermally annealed to remove the grafts (c → d), leading to defunctionalized SWNTs. Gate (G), source (S), and drain (D) electrodes of the devices are identified in the last panel.
Typical transfer characteristics of individual (a) pristine SWNT, (b) CH2 < SWNT, and (c) CCl2 < SWNT devices. Full line was measured before annealing (i.e., in functionalized state) and dashed line after annealing (i.e., in defunctionalized state). Metallic devices are shown on top and semiconducting ones underneath.
Distribution of current loss (i.e., ratio after/before annealing) of 91 pristine SWNT (black), 105 CH2 < SWNT (blue), and 89 CCl2 < SWNT (red) devices. Similar data from Ref. 31 is added for 27 4-bromophenyl-SWNT devices (gray). Lognormal fits (lines) are superposed over the data (histograms).
Statistical data for comparing the current loss ratio distributions: N is the number of devices, while and are the geometric mean and standard width of the lognormal fit over the experimental distribution. The last column provides the results of the one-tailed T-test for with a 95% confidence level.
Article metrics loading...