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Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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10.1063/1.4739525
/content/aip/journal/apl/101/5/10.1063/1.4739525
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4739525
/content/aip/journal/apl/101/5/10.1063/1.4739525
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/content/aip/journal/apl/101/5/10.1063/1.4739525
2012-07-30
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4739525
10.1063/1.4739525
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