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Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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10.1063/1.4739525
/content/aip/journal/apl/101/5/10.1063/1.4739525
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4739525
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Id-Vg and (b) Ig-Vg transfer characteristic curves of high-k/metal gate MOSFETs as function of stress time under dynamic NBS. The sweep was done at Vd = −0.05 V for both curves.

Image of FIG. 2.
FIG. 2.

(a) Ig-Vg characteristic curves in the SBD, BF, and SDB conditions. The energy band diagram shows gate current is the Frenkel-Poole path. (b) Id-Vg transfer characteristic curves of high-k/metal gate MOSFETs under initial and after dynamic NBS. Inset shows that gate current is fitted by Frenkel-Poole model under initial.

Image of FIG. 3.
FIG. 3.

(a) Id-Vg transfer characteristic curves under initial and after dynamic NBS. (b) Gate current in section A is fitted by Frenkel-Poole model after dynamic NBS. (c) Gate current in section B is fitted by tunneling model after dynamic NBS. (d) Gate current in section C is fitted by Frenkel-Poole model after dynamic NBS.

Image of FIG. 4.
FIG. 4.

The energy band diagram of high-k/metal gate MOSFETs in the Vg = 0 V condition (a) without hole trapping and (b) with hole trapping. (c) The energy band diagram of high-k/metal gate MOSFETs in the Vg < Vt condition with hole trapping. (d) The energy band diagram of high-k/metal gate MOSFETs in the Vg > Vt condition with hole trapping.

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/content/aip/journal/apl/101/5/10.1063/1.4739525
2012-07-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4739525
10.1063/1.4739525
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